文章摘要
引用本文:蔡志猛,陈荔群,李 成.SOI基锗共振腔增强型光电探测器的制作与性能测试[J].福州大学学报(自然科学版),2016,44(5):656~660
SOI基锗共振腔增强型光电探测器的制作与性能测试
Characteristics of SOI-based RCE-Ge photodetectors
  
DOI:10.7631/issn.1000-2243.2016.05.0656
中文关键词:   共振腔增强型  SOI  光电探测器
英文关键词: germanium  resonant cavity-enhanced  silicon-on-insulator  photodetector
基金项目:
作者单位
蔡志猛 厦门华厦学院信息与机电工程系福建 厦门 361000 
陈荔群 集美大学诚毅学院福建 厦门 361021 
李 成 厦门大学物理系光子学研究中心福建 厦门 361005 
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中文摘要:
      在超高真空化学气相沉积设备上,利用低温生长的硅锗和锗作为缓冲层,在SOI衬底上成功外延出高质量的锗薄膜. 基于谐振腔增强型探测器(RCE)理论,模拟优化了有源层和上下反射层的厚度尺寸. 传输矩阵方法计算结果显示:将SOI衬底自有二氧化硅、硅层作为一对下反射层的情况下,取2对SiO2/Ta2O5作为上反射层时,量子效率可以达到接近56%. 制作的SOI基锗光电探测器,暗电流密度为0.65mA·cm-2. 在 8V的偏压下,探测器在1550nm处响应度1.45mA·W-1,可以观察到探测器的共振现象.
英文摘要:
      Tensily strianed Ge thin films are successfully grown on SOI substrates by the UHV-CVD. The Ge layer are characterized with high quality. Based on the theory of resonant cavity enhanced detector (RCE) ,the before and after DBR mirror and absorption layer thickness has been optimized designed . The simulation results show that:when the original SOI substrate silica / silicon works as a lower mirror,and the bottom mirror is 2 pairs of SiO2<-sub>/Ta2O5,quantum efficiency can reach near 56%. Based on the optimal theoretical results,a SOI based germanium photodetector has fabricated,and the dark current density of the device is 0.65mA·cm-2. The responsivity of the SOI-based RCE-MSM photodectors is 1.45mA·W-1 at 1550nm and -8V. The resonant effect can be observed.
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